IXTA02N250 - IXYS

IXTA02N250 High Voltage Power MOSFET

High Voltage Power MOSFETs N-Channel Enhancement Mode Fast Intrinsic Diode IXTA02N250 IXTH02N250 IXTV02N250S VDSS = ID25 = ≤RDS(on) 2500V 200mA 450Ω TO-263 (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width.

Features

z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings Applications z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS100187C(04/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 100V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5
• VDSS, ID = 0.5
• ID25 RG = 100Ω (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5
• VDSS, ID = 0.5
• ID25 RthJC RthCS TO-247 & PLUS220 .