TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA90N075T2 IXTP90N075T2 Symbol VDSS VDGR VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 75 V 75 V 20 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = .
International Standard Packages
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
175°C Operating Temperature
High Current Handling Capability
ROHS Compliant
High Performance Trench
Technology for extremely low RDS(on)
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Automotive Engine Control
Synchronous Buck Converter
(for Notebook SystemPower & General Purpose Point & Load)
DC/DC Converters
High Current Switching Applications
Power Train Management
Distributed Power Architecture
© 2018 IXYS CORPORATION, All Rights Reserved
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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 10mΩ@VGS=10V ·Fully characteriz.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXTA90N055T |
IXYS Corporation |
Power MOSFET | |
2 | IXTA90N055T |
INCHANGE |
N-Channel MOSFET | |
3 | IXTA90N055T2 |
IXYS |
Power MOSFET | |
4 | IXTA90N055T2 |
INCHANGE |
N-Channel MOSFET | |
5 | IXTA90N15T |
INCHANGE |
N-Channel MOSFET | |
6 | IXTA90N15T |
IXYS |
Power MOSFET | |
7 | IXTA96N25T |
INCHANGE |
N-Channel MOSFET | |
8 | IXTA96P085T |
IXYS |
Power MOSFET | |
9 | IXTA98N075T |
IXYS Corporation |
Power MOSFET | |
10 | IXTA98N075T |
INCHANGE |
N-Channel MOSFET | |
11 | IXTA02N250 |
IXYS |
High Voltage Power MOSFET | |
12 | IXTA02N450HV |
IXYS |
High Voltage Power MOSFETs |