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High Voltage Power MOSFETs Advance Technical Information IXTA02N450HV IXTT02N450HV VDSS ID25 RDS(on) = 4500V = 200mA ≤ 750Ω N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJ.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXTA02N250 |
IXYS |
High Voltage Power MOSFET |
|
| 2 | IXTA05N100 |
IXYS Corporation |
Power MOSFET |
|
| 3 | IXTA05N100 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXTA05N100HV |
IXYS |
Power MOSFET |
|
| 5 | IXTA08N100D2 |
IXYS |
Power MOSFET |
|
| 6 | IXTA08N100P |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXTA08N100P |
IXYS |
Power MOSFET |
|
| 8 | IXTA08N50D2 |
IXYS Corporation |
N-Channel MOSFET |
|
| 9 | IXTA100N04T2 |
IXYS |
Power MOSFET |
|
| 10 | IXTA100N04T2 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXTA100N15X4 |
IXYS |
Power MOSFET |
|
| 12 | IXTA102N15T |
IXYS |
Power MOSFET |
|