IXTA08N50D2 - IXYS Corporation

IXTA08N50D2 N-Channel MOSFET

Depletion Mode MOSFET N-Channel IXTY08N50D2 IXTA08N50D2 IXTP08N50D2 D VDSX = ID(on) >  RDS(on) 500V 800mA 4.6 TO-252 (IXTY) G S Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO.

Features

• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages
• Easy to Mount
• Space Savings
• High Power Density Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads © 2017 IXYS CORPORATION, All Rights Reserved DS100178E(9/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 30V, ID = 400mA, Note 1 Ciss Coss Crss VGS = -10V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 5V, VDS = 250V, ID = 40.