IXTA05N100 - IXYS Corporation

IXTA05N100 Power MOSFET

High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05N100 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  .

Features

 High Voltage Package (TO-263HV)
 Fast Switching Times
 Avalanche Rated
 Rds(on) HDMOSTM Process
 Rugged Polysilicon Gate Cell structure
 Extended FBSOA Advantages
 High Power Density
 Space Savings Applications
 Switch-Mode and Resonant-Mode Power Supplies
 Flyback Inverters
 DC Choppers © 2014 IXYS CORPORATION, All rights reserved DS98736F(5/14) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 500mA, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5
• VDSS, ID = 1A RG.