IXTA08N100P - IXYS

IXTA08N100P Power MOSFET

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY08N100P IXTA08N100P IXTP08N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 V 1000 V 20 V 30 V TC = 25C TC = 25C, Pulse Width .

Features

 International Standard Packages
 Low QG
 Avalanche Rated
 Low Package Inductance
 Fast Intrinsic Rectifier Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 DC-DC Converters
 Switch-Mode and Resonant-Mode Power Supplies
 AC and DC Motor Drives
  Lasers Driverserators
Robotics and Servo Controls © 2017 IXYS CORPORATION, All Rights Reserved DS99865D(8/17) IXTY08N100P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 30V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Qg(on) Qgs VGS = 10V.