IXTA08N100D2 - IXYS

IXTA08N100D2 Power MOSFET

Depletion Mode MOSFET N-Channel IXTY08N100D2 IXTA08N100D2 IXTP08N100D2 D VDSX = ID(on) >  RDS(on) 1000V 800mA 21 TO-252 (IXTY) G S G S D (Tab) TO-263 AA (IXTA) Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case f.

Features

• Normally ON Mode
• International Standard Packages
• Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages
• Easy to Mount
• Space Savings
• High Power Density Applications
• Audio Amplifiers
• Start-up Circuits
• Protection Circuits
• Ramp Generators
• Current Regulators
• Active Loads © 2017 IXYS CORPORATION, All Rights Reserved DS100182C(9/17) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 30V, ID = 400mA, Note 1 Ciss Coss Crss VGS = -10V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 5V, VDS = 500V, ID = 40.