High Speed IGBT Short Circuit SOA Capability IXSH 40N60B VCES = = IXST 40N60B IC25 VCE(sat) = tfi typ = 600V 75A 2.2V 100 ns Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque Test Conditions TJ = 25°C to 15.
G = Gate E = Emitter TAB = Collector G E (TAB) (TAB) G C E TO-247 AD (IXSH)
TO-268 (D3) ( IXST)
1.13/10 Nm/lb.in. 6 300 g °C
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C 7 25 1 ±100 2.2 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 4 mA, VCE = VGE
VCE = 0.8
• VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98521B (7/00)
© 2000 IXYS All rights reserved
1-2
IXSH 40N60B IXST 40N60B
Symbo.
High Speed IGBT Short Circuit SOA Capability IXSH 40N60B VCES = IXST 40N60B IC25 = VCE(sat) = tfi typ = 600V 75A 2.2.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXST45N120B |
IXYS |
High Voltage IGBT | |
2 | IXST15N120B |
IXYS |
High Voltage IGBT | |
3 | IXST15N120BD1 |
IXYS Corporation |
Improved SCSOA Capability | |
4 | IXST24N60B |
IXYS |
High Speed IGBT | |
5 | IXST24N60BD1 |
IXYS |
High Speed IGBT | |
6 | IXST30N60B |
IXYS Corporation |
High Speed IGBT | |
7 | IXST30N60B2D1 |
IXYS |
High Speed IGBT with Diode | |
8 | IXST30N60BD1 |
IXYS Corporation |
High Speed IGBT | |
9 | IXST30N60C |
IXYS Corporation |
High Speed IGBT | |
10 | IXST30N60CD1 |
IXYS Corporation |
Short Circuit SOA Capability | |
11 | IXST35N120B |
IXYS Corporation |
IGBT | |
12 | IXSA10N60B2D1 |
IXYS Corporation |
High Speed IGBT |