Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
High Speed IGBT Short Circuit SOA Capability IXSH IXST IXSH IXST 24N60B 24N60B 24N60BD1 24N60BD1 VCES IC25 VCE(sat) tfi typ = 600 V = 48 A = 2.5 V = 170 ns (D1) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC =.
z z Mounting torque 1.13/10 Nm/lb.in. 6 300 g °C z Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s z z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 3.5 24N60B 24N60BD1 24N60B 24N60BD1 6.5 25 200 1 2 ±100 2.5 V V µA µA mA mA nA V International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 50 kHz Applications z z z BVCES VGE(t.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXST24N60BD1 |
IXYS |
High Speed IGBT |
|
| 2 | IXST15N120B |
IXYS |
High Voltage IGBT |
|
| 3 | IXST15N120BD1 |
IXYS Corporation |
Improved SCSOA Capability |
|
| 4 | IXST30N60B |
IXYS Corporation |
High Speed IGBT |
|
| 5 | IXST30N60B2D1 |
IXYS |
High Speed IGBT with Diode |
|
| 6 | IXST30N60BD1 |
IXYS Corporation |
High Speed IGBT |
|
| 7 | IXST30N60C |
IXYS Corporation |
High Speed IGBT |
|
| 8 | IXST30N60CD1 |
IXYS Corporation |
Short Circuit SOA Capability |
|
| 9 | IXST35N120B |
IXYS Corporation |
IGBT |
|
| 10 | IXST40N60B |
ETC |
High Speed IGBT |
|
| 11 | IXST40N60B |
IXYS |
High Speed IGBT |
|
| 12 | IXST45N120B |
IXYS |
High Voltage IGBT |
|