IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE(sat) = 3.6 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 5 Ω Clamped in.
l
Mounting torque
(TO-247)
1.13/10 Nm/lb.in. 300
l
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268
Epitaxial Silicon drift region - fast switching - small tail current MOS gate turn-on for drive simplicity
6 4
Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 3 TJ = 25°C TJ = 125°C 6 50 2.5 ±100 TJ = 25°C TJ = 125°C 3.6 2.9 V V µA mA nA V V
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
po.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXST30N60B |
IXYS Corporation |
High Speed IGBT | |
2 | IXST30N60B2D1 |
IXYS |
High Speed IGBT with Diode | |
3 | IXST30N60BD1 |
IXYS Corporation |
High Speed IGBT | |
4 | IXST30N60C |
IXYS Corporation |
High Speed IGBT | |
5 | IXST30N60CD1 |
IXYS Corporation |
Short Circuit SOA Capability | |
6 | IXST15N120B |
IXYS |
High Voltage IGBT | |
7 | IXST15N120BD1 |
IXYS Corporation |
Improved SCSOA Capability | |
8 | IXST24N60B |
IXYS |
High Speed IGBT | |
9 | IXST24N60BD1 |
IXYS |
High Speed IGBT | |
10 | IXST40N60B |
ETC |
High Speed IGBT | |
11 | IXST40N60B |
IXYS |
High Speed IGBT | |
12 | IXST45N120B |
IXYS |
High Voltage IGBT |