IXST15N120B - IXYS

IXST15N120B High Voltage IGBT

HIGH Voltage IGBT IXSH 15N120B IXST 15N120B "S" Series - Improved SCSOA Capability IC25 VCES VCE(sat) = 30 A = 1200 V = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR V GES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient 1200 1200 ±20 ±30 TC = 25°C TC = 90°C TC = .

Features

• High Blocking Voltage
• Epitaxial Silicon drift region - fast switching - small tail current - low switching losses
• MOS gate turn-on for drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode power supplies
• DC choppers IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved 98652A (7/00) 1-2 IXSH 15N120B IXST 15N120B Symbol gfs Cies C oes Cres Qg Q ge Qgc t d(on) tri t d(off) .