High Speed IGBT with Diode IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1 VCES IC25 VCE(sat) Short Circuit SOA Capability tfi = 600 V = 55 A = 2.0 V = 140 ns www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamp.
• International standard packages: JEDEC TO-247, TO-264& TO-268
• Short Circuit SOA capability
• Medium freqeuncy IGBT and antiparallel FRED in one package
• New generation HDMOSTM process Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode power supplies Advantages
• Space savings (two devices in one package)
• Easy to mount with 1 screw (isolated mounting screw hole)
• Surface mountable, high power case style
• Reduces assembly time and cost
• High power density
Symbol
Test Conditions
Charac.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXST30N60B |
IXYS Corporation |
High Speed IGBT | |
2 | IXST30N60B2D1 |
IXYS |
High Speed IGBT with Diode | |
3 | IXST30N60C |
IXYS Corporation |
High Speed IGBT | |
4 | IXST30N60CD1 |
IXYS Corporation |
Short Circuit SOA Capability | |
5 | IXST35N120B |
IXYS Corporation |
IGBT | |
6 | IXST15N120B |
IXYS |
High Voltage IGBT | |
7 | IXST15N120BD1 |
IXYS Corporation |
Improved SCSOA Capability | |
8 | IXST24N60B |
IXYS |
High Speed IGBT | |
9 | IXST24N60BD1 |
IXYS |
High Speed IGBT | |
10 | IXST40N60B |
ETC |
High Speed IGBT | |
11 | IXST40N60B |
IXYS |
High Speed IGBT | |
12 | IXST45N120B |
IXYS |
High Voltage IGBT |