IXKR40N60C - IXYS Corporation

IXKR40N60C CoolMOS Power MOSFET

www.DataSheet4U.com Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS IXKR 40N60C 600 V ID25 38 A RDS(on) 70 mΩ MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 50A;diF/dt≤ 200A/µs TVJ = 150°.

Features

J mJ q Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 70 mΩ 3.5 60 5.5 V q ISOPLUS247 package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - JEDEC TO247AD compatible - Easy clip assembly fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhan.