IXKC25N80C - IXYS

IXKC25N80C Power MOSFET

www.DataSheet4U.com Power MOSFET ISOPLUS220TM Electrically Isolated Back Surface Low RDS(on), High Voltage, CoolMOSTM Superjunction MOSFET Preliminary Data Sheet Symbol VDSS VGS VGSM ID25 ID90 ID(RMS) EAS EAR dv/dt PD TJ TJM Tstg TL VISOL FC Weight 1.6 mm (0.062 in.) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force Test Conditions .

Features

Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z 3RD generation CoolMos power MOSFET - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) z Low thermal resistance due to reduced chip thickness z Low drain to tab capacitance(<30pF) z 11 ... 65 / 2.4 ...11 N/lb 3 g Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 136 280 2 TJ = 25°C TJ = 125°C 10 ±200 150 mΩ mΩ 4 50 V µA µA nA Applications Switched Mode Power S.