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IXKC 20N60C CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge D G S VDSS = 600 V ID25 = 15 A RDS(on) max = 190 mΩ ISOPLUS220TM G D S E72873 q isolated tab MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR Conditions TVJ = 25°C TC = 25°C TC = .
• Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF)
• CoolMOS™ 1) power MOSFET - 3rd generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
Advantages
• Easy as.
IXKC20N60C - INCHANGE
isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 190mΩ@V.
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|---|---|---|---|---|
| 1 | IXKC23N60C5 |
INCHANGE |
N-Channel MOSFET |
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| 2 | IXKC23N60C5 |
IXYS |
Power MOSFET |
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| 3 | IXKC25N80C |
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| 4 | IXKC13N80C |
IXYS Corporation |
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| 5 | IXKC13N80C |
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N-Channel MOSFET |
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| 6 | IXKC15N60C5 |
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Power MOSFET |
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| 7 | IXKC15N60C5 |
INCHANGE |
N-Channel MOSFET |
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| 8 | IXKC19N60C5 |
INCHANGE |
N-Channel MOSFET |
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| 9 | IXKC19N60C5 |
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| 10 | IXKC40N60C |
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| 11 | IXKF40N60SCD1 |
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| 12 | IXKG25N80C |
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