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isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 125mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VA.
·High power dissipation
·Static drain-source on-resistance:
RDS(on) ≤ 125mΩ@VGS=10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
19
IDM
Drain Current-Single Pulsed
15
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER.
IXKC19N60C5 - IXYS
Advanced Technical Information IXKC 19N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electr.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXKC13N80C |
IXYS Corporation |
CoolMOS Power MOSFET |
|
| 2 | IXKC13N80C |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXKC15N60C5 |
IXYS |
Power MOSFET |
|
| 4 | IXKC15N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IXKC20N60C |
IXYS Corporation |
CoolMOS Power MOSFET |
|
| 6 | IXKC20N60C |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXKC23N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IXKC23N60C5 |
IXYS |
Power MOSFET |
|
| 9 | IXKC25N80C |
IXYS |
Power MOSFET |
|
| 10 | IXKC40N60C |
IXYS Corporation |
CoolMOS Power MOSFET |
|
| 11 | IXKF40N60SCD1 |
IXYS Corporation |
CoolMOS Power MOSFET |
|
| 12 | IXKG25N80C |
IXYS Corporation |
CoolMOS Power MOSFET ISO264 |
|