IXKR25N80C - IXYS Corporation

IXKR25N80C CoolMOS Power MOSFETs

Advanced Technical Information www.DataSheet4U.com CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base G VDSS IXKR 25N80C 800 V ID25 RDS(on) 25 A 125 mΩ D *) S MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25°C TC = 90°C VDS < VDSS; IF ≤ 17 A;diF /dt≤ 100 .

Features

J mJ Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 125 2 100 200 166 18 84 25 15 72 6 1 1.3 150 m Ω 4 50 V µA µA nA nC nC nC ns ns ns ns V
• ISOPLUS247 package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - JEDEC TO247AD compatible - Easy clip assembly
• fast CoolMOS power MOSFET - 3rd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switchin.