Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
IXKH 24N60C5 IXKP 24N60C5 CoolMOS™ 1) Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data ID25 = 24 A VDSS = 600 V RDS(on) max = 0.165 Ω D TO-247 AD (IXKH) G S G D S TO-220 AB (IXKP) q D(TAB) MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse.
• fast CoolMOS™ 1) power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
1) CoolMOS™ is a trademark of Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved
20080523c
1-4
Source-D.
IXKP24N60C5 - INCHANGE
isc N-Channel MOSFET Transistor IXKP24N60C5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 0.165Ω@VGS=10V ·Fu.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXKP20N60C5 |
IXYS |
Power MOSFET |
|
| 2 | IXKP20N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IXKP10N60C5M |
IXYS |
CoolMOS Power MOSFET |
|
| 4 | IXKP13N60C5M |
IXYS |
CoolMOS Power MOSFET |
|
| 5 | IXKC13N80C |
IXYS Corporation |
CoolMOS Power MOSFET |
|
| 6 | IXKC13N80C |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IXKC15N60C5 |
IXYS |
Power MOSFET |
|
| 8 | IXKC15N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IXKC19N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IXKC19N60C5 |
IXYS |
Power MOSFET |
|
| 11 | IXKC20N60C |
IXYS Corporation |
CoolMOS Power MOSFET |
|
| 12 | IXKC20N60C |
INCHANGE |
N-Channel MOSFET |
|