IXKP13N60C5M - IXYS

IXKP13N60C5M CoolMOS Power MOSFET

IXKP 13N60C5M CoolMOS™ 1) Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge Preliminary data D G S ID25 = 6.5 A VDSS = 600 V R =DS(on) max 0.3 Ω TO-220 FP G D S MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 4.4 A.

Features

• fast CoolMOS™ 1) power MOSFET 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness
• Enhanced total power density Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter 1) CoolMOS™ is a trademark of Infineon Technologies AG. IXYS reserves the right to change limits, test conditions and dimensions. © 2009 IXYS All rights reserved 20090209d 1-4 Source-Dra.