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Advanced Technical Information IXKP 10N60C5M CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge ID25 = 5.4 A VDSS = 600 V RDS(on) max = 0.385 Ω D G S TO-220 ABFP G D S MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitiv.
• Fast CoolMOS power MOSFET - 4th generation - High blocking capability - Lowest resistance - Avalanche rated for unclamped inductive switching (UIS)
• Fully isolated package
Applications
• Switched mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
CoolMOS is a trademark of Infineon Technologies AG.
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IXYS reserves the right to change limits, test conditions and dimensions. © 2006 IXYS All rights reserved
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Advanced Technical Information
Source-Drain Diode
Symbol Conditions
Characteri.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXKP13N60C5M |
IXYS |
CoolMOS Power MOSFET |
|
| 2 | IXKP20N60C5 |
IXYS |
Power MOSFET |
|
| 3 | IXKP20N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IXKP24N60C5 |
IXYS |
CoolMOS Power MOSFET |
|
| 5 | IXKP24N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IXKC13N80C |
IXYS Corporation |
CoolMOS Power MOSFET |
|
| 7 | IXKC13N80C |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IXKC15N60C5 |
IXYS |
Power MOSFET |
|
| 9 | IXKC15N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | IXKC19N60C5 |
INCHANGE |
N-Channel MOSFET |
|
| 11 | IXKC19N60C5 |
IXYS |
Power MOSFET |
|
| 12 | IXKC20N60C |
IXYS Corporation |
CoolMOS Power MOSFET |
|