IXKC19N60C5 |
Part Number | IXKC19N60C5 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 125mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device p... |
Features |
·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 125mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 19 IDM Drain Current-Single Pulsed 15 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER... |
Document |
IXKC19N60C5 Data Sheet
PDF 257.37KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXKC19N60C5 |
IXYS |
Power MOSFET | |
2 | IXKC13N80C |
IXYS Corporation |
CoolMOS Power MOSFET | |
3 | IXKC13N80C |
INCHANGE |
N-Channel MOSFET | |
4 | IXKC15N60C5 |
IXYS |
Power MOSFET | |
5 | IXKC15N60C5 |
INCHANGE |
N-Channel MOSFET |