IXKF40N60SCD1 - IXYS Corporation

IXKF40N60SCD1 CoolMOS Power MOSFET

IXKF 40N60SCD1 CoolMOS™ 1) Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode in High Voltage ISOPLUS i4-PAC™ 5 Preliminary data DS DF 1T 2 VDSS = 600 V ID25 = 41 A R DS(on) typ. = 60 mΩ trr = 70 ns ISOPLUS i4-PAC™ 1 2 5 E72873 MOSFET T Symbol Conditions VDSS VGS ID25 ID90 TVJ = 25°C to 150°C TC = 25°C TC = 90°C Ma.

Features

• fast CoolMOS™ 1) power MOSFET 3rd generation - high blocking voltage - low on resistance - low thermal resistance due to reduced chip thickness
• Series Schottky diode prevents current flow through MOSFET’s body diode - very low forward voltage - fast switching
• Ultra fast HiPerFRED™ anti parallel diode - low operating forward voltage - fast and soft reverse recovery - low switching losses
• ISOPLUS i4-PAC™ high voltage package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - enlarged .