HiPerFASTTM IGBT Preliminary data sheet IXGH 28N90B VCES IXGT 28N90B IC25 VCE(SAT) tfi(typ) = 900 V = 51 A = 2.7 V = 130 ns www.DataSheet4U.com Symbol VCES VCGR VGES VGEM I C25 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive l.
l International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD l High current handling capability l Latest generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switched-mode and resonant-mode power supplies Advantages l Space savings (two devices in one package) l High power density l Suitable for surface mounting l Switching speed for high frequency applications l Easy to mount with 1 screw,TO-247 (isolated mounting screw hole) Symbol Tes.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGH28N120B |
IXYS Corporation |
High Voltage IGBT | |
2 | IXGH28N120BD1 |
IXYS |
High Voltage IGBT | |
3 | IXGH28N140B3H1 |
IXYS Corporation |
GenX3 1400V IGBT Diode | |
4 | IXGH28N30 |
IXYS Corporation |
HiPerFAST IGBT | |
5 | IXGH28N30A |
IXYS Corporation |
HiPerFAST IGBT | |
6 | IXGH28N30B |
IXYS Corporation |
HiPerFAST IGBT | |
7 | IXGH28N60B |
IXYS Corporation |
Ultra-low V Ce(sat) Igbt | |
8 | IXGH28N60BD1 |
IXYS Corporation |
Low VCE(sat) IGBT with Diode | |
9 | IXGH20N100 |
IXYS |
IGBT | |
10 | IXGH20N120 |
IXYS Corporation |
(IXGH20N120 / IXGT20N120) IGBT | |
11 | IXGH20N120A3 |
IXYS Corporation |
GenX3 1200V IGBTs | |
12 | IXGH20N120B |
IXYS |
High Voltage IGBT |