IXGH28N60BD1 - IXYS Corporation

IXGH28N60BD1 Low VCE(sat) IGBT with Diode

Low VCE(sat) IGBT with Diode IXGH 28N60BD1 IXGT 28N60BD1 VCES = 600 V = 40 A IC25 VCE(sat) = 2.0 V Preliminary data Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Mounting torque (M3) TO-247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Test Conditions T J = 25°C to 150°C T J = 2.

Features

• International standard packages
• IGBT and anti-parallel FRED in one package
• Low VCE(sat) - for minimum on-state conduction losses
• MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25°C TJ = 125°C 5.5 200 3 ±100 2.0 V V mA mA nA V
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• AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies G = Gate, E = Emitter, C = Collector, TAB = Collector G C E TAB TO-268 (IXGT) G E C (TAB) TO-247.