HiPerFASTTM IGBT IXGH 28N30A IXGT 28N30A VCES = = IC25 VCE(sat)typ = tfi(typ) = 300 56 1.85 120 V A V ns Preliminary data TO-247 AD (IXGH) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight M.
• International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD
• High current handling capability
• Newest generation HDMOSTM process
• MOS Gate turn-on - drive simplicity Applications
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• AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies G = Gate, E = Emitter, C = Collector, TAB = Collector TO-268 (IXGT)
G E (TAB) G C E (TAB)
1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. ma.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGH28N30 |
IXYS Corporation |
HiPerFAST IGBT | |
2 | IXGH28N30B |
IXYS Corporation |
HiPerFAST IGBT | |
3 | IXGH28N120B |
IXYS Corporation |
High Voltage IGBT | |
4 | IXGH28N120BD1 |
IXYS |
High Voltage IGBT | |
5 | IXGH28N140B3H1 |
IXYS Corporation |
GenX3 1400V IGBT Diode | |
6 | IXGH28N60B |
IXYS Corporation |
Ultra-low V Ce(sat) Igbt | |
7 | IXGH28N60BD1 |
IXYS Corporation |
Low VCE(sat) IGBT with Diode | |
8 | IXGH28N90B |
IXYS Corporation |
HIPERFAST IGBT | |
9 | IXGH20N100 |
IXYS |
IGBT | |
10 | IXGH20N120 |
IXYS Corporation |
(IXGH20N120 / IXGT20N120) IGBT | |
11 | IXGH20N120A3 |
IXYS Corporation |
GenX3 1200V IGBTs | |
12 | IXGH20N120B |
IXYS |
High Voltage IGBT |