IXGH20N120A3 - IXYS Corporation

IXGH20N120A3 GenX3 1200V IGBTs

GenX3TM 1200V IGBTs Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 VCES = 1200V IC110 = 20A VCE(sat) ≤ 2.5V TO-263 AA (IXGA) G E C (Tab) Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md FC TL TSOLD Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ.

Features

z z Optimized for Low Conduction Losses International Standard Packages Advantages z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250μA, VGE = 0V = 250μA, VCE = VGE TJ = 125°C Characteristic Values Min. Typ. Max. 1200 2.5 5.0 25 1 ±100 TJ = 125°C 2.3 2.5 2.5 V V μA mA nA V V High Power Density Low Gate Drive Requirement Applications z z z z z z z z z VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC = 20A, VGE = 15V, Note 1 Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Inrush Cu.