IXGH20N120B - IXYS

IXGH20N120B High Voltage IGBT

High Voltage IGBT Preliminary Data Sheet IXGH 20N120B VCES IXGT 20N120B IC25 VCE(sat) tfi(typ) = 1200 = 40 = 3.4 = 160 V A V ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 .

Features

z High Voltage IGBT for resonant power supplies - Induction heating - Rice cookers z International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD z Low switching losses, low V(sat) z MOS Gate turn-on - drive simplicity Advantages BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 250 µA, VCE = VGE z z z VCE = VCES VCE = 0 V, VGE = ±20 V IC = 20A, VGE = 15 V High power density Suitable for surface mounting Easy to mount with 1 screw, (isolated mounting screw hole) © 2003 IXYS All rights reserved DS98986D(05/03) Datasheet pdf - http://www.DataSheet4U.net/ IXGH IXGT.