HiPerFASTTM IGBT IXGH 28N30B IXGT 28N30B VCES IC25 VCE(sat)typ tfi(typ) = 300 V = 56 A = 2.1 V = 55 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L.
• International standard packages JEDEC TO-268 surface and JEDEC TO-247 AD
• High current handling capability
• Newest generation HDMOSTM process
• MOS Gate turn-on - drive simplicity Applications
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• AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3)
1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g
Symbol
Test Conditions
Characteri.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXGH28N30 |
IXYS Corporation |
HiPerFAST IGBT | |
2 | IXGH28N30A |
IXYS Corporation |
HiPerFAST IGBT | |
3 | IXGH28N120B |
IXYS Corporation |
High Voltage IGBT | |
4 | IXGH28N120BD1 |
IXYS |
High Voltage IGBT | |
5 | IXGH28N140B3H1 |
IXYS Corporation |
GenX3 1400V IGBT Diode | |
6 | IXGH28N60B |
IXYS Corporation |
Ultra-low V Ce(sat) Igbt | |
7 | IXGH28N60BD1 |
IXYS Corporation |
Low VCE(sat) IGBT with Diode | |
8 | IXGH28N90B |
IXYS Corporation |
HIPERFAST IGBT | |
9 | IXGH20N100 |
IXYS |
IGBT | |
10 | IXGH20N120 |
IXYS Corporation |
(IXGH20N120 / IXGT20N120) IGBT | |
11 | IXGH20N120A3 |
IXYS Corporation |
GenX3 1200V IGBTs | |
12 | IXGH20N120B |
IXYS |
High Voltage IGBT |