HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 80N50 IXFN 75N50 D G S ID25 80 A 75 A RDS(on) 50 mΩ 55 mΩ 500 V 500 V S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continu.
• International standard packages
• miniBLOC, with Aluminium nitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
50/60 Hz, RMS IISOL ≤ 1 mA
t = 1 min t=1s
2500 3000
Mounting torque Terminal connection torque
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 TJ = 25°C TJ = 125°C 80N50 75N50 4 ± 200 100 2 50 55 V V nA µA mA mΩ mΩ
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFN80N50P |
IXYS |
PolarHV HiPerFET Power MOSFET | |
2 | IXFN80N50Q2 |
IXYS |
HiPerFET Power MOSFET | |
3 | IXFN80N50Q3 |
IXYS Corporation |
Power MOSFET | |
4 | IXFN80N60P3 |
IXYS Corporation |
Polar3 HiPerFET Power MOSFET | |
5 | IXFN82N60Q3 |
IXYS |
Power MOSFET | |
6 | IXFN100N10S1 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
7 | IXFN100N10S2 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
8 | IXFN100N10S3 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
9 | IXFN100N20 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
10 | IXFN100N25 |
IXYS Corporation |
N-Channel MOSFET | |
11 | IXFN100N50P |
IXYS Corporation |
Power MOSFET | |
12 | IXFN100N50Q3 |
IXYS Corporation |
HiperFET Power MOSFET Q3-Class |