IXFN80N50 IXYS Corporation (IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET Datasheet, en stock, prix

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IXFN80N50

IXYS Corporation
IXFN80N50
IXFN80N50 IXFN80N50
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Part Number IXFN80N50
Manufacturer IXYS Corporation
Description HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 80N50 IXFN 75N50 D G S ID25 80 A 75 A RDS(on) 50 mΩ 55 mΩ 500 V 500 V S Symbo...
Features
• International standard packages
• miniBLOC, with Aluminium nitride isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
• Low package inductance
• Fast intrinsic Rectifier Applications
• DC-DC converters Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 TJ = 25°C TJ = 125°C 80N50 75N50 4 ± 200 100 2 50 55 V V nA µA mA mΩ mΩ


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Document Datasheet IXFN80N50 Data Sheet
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