IXFN80N50Q3 - IXYS Corporation

IXFN80N50Q3 Power MOSFET

Advance Technical Information HiperFETTM Power MOSFET Q3-Class N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN80N50Q3 VDSS ID25 RDS(on) trr = = ≤ ≤ 500V 63A 65mΩ 250ns miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Mounting Torque for Base Plate T.

Features

z z z S G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. z z z International Standard Package Low Intrinsic Gate Resistance miniBLOC with Aluminum Nitride Isolation Low Package Inductance Fast Intrinsic Rectifier Low RDS(on) and QG Advantages z z z High Power Density Easy to Mount Space Savings Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 40A, Note 1.