IXFN82N60Q3 - IXYS

IXFN82N60Q3 Power MOSFET

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFN82N60Q3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ .

Features

 International Standard Package
 Low Intrinsic Gate Resistance
 miniBLOC with Aluminum Nitride Isolation
 Low Package Inductance
 Fast Intrinsic Rectifier
 Low RDS(on) and QG Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 DC-DC Converters
 Battery Chargers
 Switch-Mode and Resonant-Mode Power Supplies
 DC Choppers
 Temperature and Lighting Controls © 2020 IXYS CORPORATION, All Rights Reserved DS100340A(1/20) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V, ID = 41A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MH.