IXFN80N50P - IXYS

IXFN80N50P PolarHV HiPerFET Power MOSFET

Advance Technical Information IXFN 80N50P PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN 80N50P VDSS ID25 trr RDS(on) www.DataSheet4U.com = 500 V = 65 A ≤ 65 mΩ ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 2.

Features

z Fast intrinsic diode z International standard package z Unclamped Inductive Switching (UIS) rated z UL recognized. z Isolated mounting base Advantages z Easy to mount z Space savings z High power density Mounting torque Terminal connection torque (M4) 1.5/13 Nm/ib.in. 1.5/13 Nm/ib.in. 30 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 500 μA VDS = VGS, ID = 8 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 500 3.0 5.0 ± 200 25 1 65 V V nA μA mA mΩ DS99477(09/05) VGS = 10 V, ID .