IXFN36N110P - IXYS Corporation

IXFN36N110P Polar Power MOSFET HiPerFET

PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight www.DataSheet4U.net IXFN36N110P VDSS = ID25 = RDS(on) ≤ ≤ trr 1100V 36A 240mΩ 300ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 2.

Features

• International standard package
• Encapsulating epoxy meets 1.6mm (0.062 in.) from case for 10s 50/60Hz, RMS IISOL ≤ 1mA t = 1min t = 1s 300 2500 3000 1.5/13 1.3/ 11.5 30 UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride isolation
• Fast recovery diode
• Unclamped Inductive Switching (UIS) Mounting torque Terminal connection torque rated
• Low package inductance - easy to drive and to protect Advantages
• Easy to mount
• Space savings
• High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID .