IXFN36N60 - IXYS

IXFN36N60 HiPerFET Power MOSFET

IXFK 32N60 IXFK 36N60 Preliminary Data IXFN 32N60 www.DataSheet4U.com IXFN 36N60 ID25 RDS(on) 0.18Ω 0.25Ω t rr 250ns 250ns VDSS HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A TO-264 AA (IXFK) Symbol VDSS VDGR V GS VGSM I D25 I DM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL .

Features

• International standard packages
• JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
• Fast intrinsic Rectifier Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays Advantages Easy to mount
• Space savings
• High power density
• G D S D (TAB) miniB.