IXFN36N110P |
Part Number | IXFN36N110P |
Manufacturer | IXYS Corporation |
Description | PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight www.DataSheet4U.net ... |
Features |
• International standard package • Encapsulating epoxy meets 1.6mm (0.062 in.) from case for 10s 50/60Hz, RMS IISOL ≤ 1mA t = 1min t = 1s 300 2500 3000 1.5/13 1.3/ 11.5 30 UL 94 V-0, flammability classification • miniBLOC with Aluminium nitride isolation • Fast recovery diode • Unclamped Inductive Switching (UIS) Mounting torque Terminal connection torque rated • Low package inductance - easy to drive and to protect Advantages • Easy to mount • Space savings • High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID ... |
Document |
IXFN36N110P Data Sheet
PDF 129.67KB |
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