Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN360N15T2 RDS(on) ≤ ≤ trr VDSS ID25 = = 150V 310A 4.0mΩ 150ns miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md www.DataSheet4U.net Test Condit.
International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20V, .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFN360N10T |
IXYS Corporation |
GigaMOS Trench HiperFET Power MOSFET | |
2 | IXFN36N100 |
ETC |
HiPerFET Power MOSFETs Single Die MOSFET | |
3 | IXFN36N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
4 | IXFN36N60 |
IXYS |
HiPerFET Power MOSFET | |
5 | IXFN300N10P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
6 | IXFN30N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
7 | IXFN30N120P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
8 | IXFN320N17T2 |
IXYS |
GigaMOS TrenchT2 HiperFET Power MOSFET | |
9 | IXFN32N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
10 | IXFN32N120 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
11 | IXFN32N120P |
IXYS Corporation |
Polar HiPerFET Power MOSFET | |
12 | IXFN32N60 |
IXYS |
HiPerFET Power MOSFET |