PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL VISOL Md 1.6mm (0.062 in.) from case for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.DataSheet4U.net IXFN30N110P VDSS ID25 RDS(on) trr = = ≤ ≤ 1100V 25A 360mΩ 300ns miniBLOC, SOT-227 B (IXFN) E153432 .
• International standard package
• Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Fast recovery diode
• Unclamped Inductive Switching (UIS)
t = 1min t = 1s
rated
• Low package inductance
- .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFN30N120P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
2 | IXFN300N10P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
3 | IXFN320N17T2 |
IXYS |
GigaMOS TrenchT2 HiperFET Power MOSFET | |
4 | IXFN32N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
5 | IXFN32N120 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
6 | IXFN32N120P |
IXYS Corporation |
Polar HiPerFET Power MOSFET | |
7 | IXFN32N60 |
IXYS |
HiPerFET Power MOSFET | |
8 | IXFN32N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
9 | IXFN340N06 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET | |
10 | IXFN340N07 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET | |
11 | IXFN34N100 |
IXYS Corporation |
Power MOSFET | |
12 | IXFN34N80 |
IXYS Corporation |
Power MOSFET |