PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN32N120P VDSS = 1200V ID25 = 32A RDS(on) ≤ 310mΩ ≤ 300ns trr miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC =.
z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 z z z z z Mounting Torque Terminal Connection Torque www.DataSheet4U.net International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) HDMOSTM Process Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 1mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFN32N120 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
2 | IXFN32N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
3 | IXFN32N60 |
IXYS |
HiPerFET Power MOSFET | |
4 | IXFN32N80P |
IXYS Corporation |
PolarHV HiPerFET Power MOSFET | |
5 | IXFN320N17T2 |
IXYS |
GigaMOS TrenchT2 HiperFET Power MOSFET | |
6 | IXFN300N10P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
7 | IXFN30N110P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
8 | IXFN30N120P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
9 | IXFN340N06 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET | |
10 | IXFN340N07 |
IXYS Corporation |
HiPerFET Power MOSFETs Single Die MOSFET | |
11 | IXFN34N100 |
IXYS Corporation |
Power MOSFET | |
12 | IXFN34N80 |
IXYS Corporation |
Power MOSFET |