IXFN360N15T2 IXYS Corporation GigaMOS TrenchT2 HiperFET Power MOSFET Datasheet, en stock, prix

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IXFN360N15T2

IXYS Corporation
IXFN360N15T2
IXFN360N15T2 IXFN360N15T2
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Part Number IXFN360N15T2
Manufacturer IXYS Corporation
Description Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN360N15T2 RDS(on) ≤ ≤ trr VDSS ID25 = = 150V 310A 4.0m...
Features International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages Easy to Mount Space Savings High Power Density Applications 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA t = 1 minute t = 1 second 300 260 2500 3000 1.5/13 1.3/11.5 30 Mounting Torque Terminal Connection Torque Weight Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20V, ...

Document Datasheet IXFN360N15T2 Data Sheet
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