IXFN106N20 IXYS Corporation HiPerFET Power MOSFETs Datasheet, en stock, prix

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IXFN106N20

IXYS Corporation
IXFN106N20
IXFN106N20 IXFN106N20
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Part Number IXFN106N20
Manufacturer IXYS Corporation
Description www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS(on) 23 mW...
Features International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier l q q q q q q q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ±200 TJ = 25°C TJ = 125°C IXFK90N20 IXFN100N20 IXFN106N20 400 2 0.023 0.023 0.020 V V nA mA mA W W W VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 8 m...

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