IXFH76N15T2 - IXYS

IXFH76N15T2 Power MOSFET

TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier IXFA76N15T2 IXFP76N15T2 IXFH76N15T2 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 150 V 150 V  20 V  30.

Features

 International Standard Packages
 175°C Operating Temperature
 High Current Handling Capability
 Fast Intrinsic Rectifier
 Dynamic dv/dt Rated
 Low RDS(on) Advantages
 Easy to Mount
 Space Savings
 High Power Density Applications
 DC-DC Converters
 Battery Chargers
 Switch-Mode and Resonant-Mode Power Supplies
 DC Choppers
 AC Motor Drives
 Uninterruptible Power Supplies
 High Speed Power Switching Applications DS100176C(11/18) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1M.