IXFH76N15T2 |
Part Number | IXFH76N15T2 |
Manufacturer | INCHANGE |
Description | isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 20mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot vari... |
Features |
·Static drain-source on-resistance: RDS(on) ≤ 20mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 76 A IDM Drain Current-Single Pulsed 200 A PD Total Dissipation @TC=25℃ 350 W Tj Operating Junction Temperature -55~175 ℃ Tstg ... |
Document |
IXFH76N15T2 Data Sheet
PDF 334.98KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | IXFH76N15T2 |
IXYS |
Power MOSFET | |
2 | IXFH76N06-11 |
IXYS Corporation |
Power MOSFET | |
3 | IXFH76N06-12 |
IXYS Corporation |
Power MOSFET | |
4 | IXFH76N07-11 |
IXYS Corporation |
Power MOSFET | |
5 | IXFH76N07-12 |
IXYS Corporation |
Power MOSFET |