www.DataSheet.co.kr HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) IXFH/IXFT 68N20 IXFH/IXFT 74N20 200 V 68 A 35 mW 200 V 74 A 30 mW trr £ 200 ns Symbol VDSS VDGR VGS VGSM I D25 IDM I AR EAR dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Co.
International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) Low rated package inductance - easy to drive and to protect Fast intrinsic Rectifier 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 6 1.13/10 Nm/lb.in. Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 200 2 4 ± 100 TJ = 25°C TJ = 125°C 200 1 30 35 V V nA mA mA mW mW DC-DC converters Synchronous rectification Battery chargers Switched-mode and reson.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFH74N20P |
IXYS Corporation |
PolarHT HiPerFET Power MOSFET | |
2 | IXFH70N15 |
IXYS Corporation |
Power MOSFET | |
3 | IXFH70N30Q3 |
IXYS |
Power MOSFET | |
4 | IXFH75N10 |
IXYS Corporation |
HiPerFET Power MOSFETs | |
5 | IXFH75N10Q |
IXYS |
POWER MOSFETS | |
6 | IXFH76N06-11 |
IXYS Corporation |
Power MOSFET | |
7 | IXFH76N06-12 |
IXYS Corporation |
Power MOSFET | |
8 | IXFH76N07-11 |
IXYS Corporation |
Power MOSFET | |
9 | IXFH76N07-12 |
IXYS Corporation |
Power MOSFET | |
10 | IXFH76N15T2 |
INCHANGE |
N-Channel MOSFET | |
11 | IXFH76N15T2 |
IXYS |
Power MOSFET | |
12 | IXFH7N80 |
IXYS Corporation |
Power MOSFET |