IXFH74N20P - IXYS Corporation

IXFH74N20P PolarHT HiPerFET Power MOSFET

www.DataSheet4U.com PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Preliminary Data Sheet IXFH 74N20P IXFV 74N20P IXFV 74N20PS VDSS ID25 trr RDS(on) = = = ≤ 200 74 34 200 V A mΩ ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL FC Md Weight Test Conditions TJ = 25°C to 175°C TJ.

Features

Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 200 2.5 5.0 ±100 25 250 34 V V nA µA µA mΩ Advantages z z z z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS99209(09/04) © 2004 IXYS All rights reserved IXFH 74.