IXFH70N30Q3 - IXYS

IXFH70N30Q3 Power MOSFET

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT70N30Q3 IXFH70N30Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C.

Features

 Low Intrinsic Gate Resistance
 International Standard Packages
 Low Package Inductance
 Fast Intrinsic Rectifier
 Low RDS(on) and QG Advantages
 High Power Density
 Easy to Mount
 Space Savings Applications
 DC-DC Converters
 Battery Chargers
 Switch-Mode and Resonant-Mode Power Supplies
 DC Choppers
 Temperature and Lighting Controls © 2020 IXYS CORPORATION, All Rights Reserved DS100380B(1/20) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
• ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz RGi Gate Input Resistance td(o.