IXFH70N15 - IXYS Corporation

IXFH70N15 Power MOSFET

www.DataSheet.co.kr Advanced Technical Information HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFH 70N15 IXFT 70N15 VDSS ID25 RDS(on) = 150 V = 70 A = 28 mW trr £ 250ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; R.

Features

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• International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Rectifier Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 150 2.0 4.0 ±100 25 750 28 V V nA mA mA mW Advantages
• Easy to mount
• Space savings
• High power density VGS = 10 V, ID =.