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IXFH70N15 |
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| Part Number | IXFH70N15 |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet.co.kr Advanced Technical Information HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFH 70N15 IXFT 70N15 VDSS ID25 RDS(on) = 150 V = 70 A ... |
| Features |
• • • • International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 150 2.0 4.0 ±100 25 750 28 V V nA mA mA mW Advantages • Easy to mount • Space savings • High power density VGS = 10 V, ID =... |
| Document |
 IXFH70N15 Data Sheet
PDF 109.60KB |
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