IXFA130N10T - IXYS Corporation

IXFA130N10T Power MOSFET

Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode IXFA130N10T IXFP130N10T Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 .

Features

 Ultra-Low On Resistance
 Avalanche Rated
 Low Package Inductance - Easy to Drive and to Protect
 175C Operating Temperature
 Fast Intrinsic Diode Advantages
 Easy to Mount
 Space Savings
 High Power Density Applications
 Automotive - Motor Drives - 42V Power Bus - ABS Systems
 DC/DC Converters and Off-line UPS
 Primary Switch for 24V and 48V Systems
 Distributed Power Architechtures and VRMs
 Electronic Valve Train Systems
 High Current Switching Applications
 High Voltage Synchronous Recifier © 2018 IXYS CORPORATION, All rights reserved DS100020A(11/18) Symbol Test Co.