IXFA10N60P - IXYS Corporation

IXFA10N60P Polar MOSFETs

Advance Technical Information www.DataSheet4U.com PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA 10N60P IXFP 10N60P VDSS = 600 V ID25 = 10 A RDS(on) ≤ 740 mΩ ≤ 250 ns trr Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS .

Features

z z z 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering TO-263 package for 10s Mounting torque TO-220 TO-263 (TO-220) 300 260 Md Weight 1.13/10 Nm/lb.in. z 4 3 g g International standard packages Fast Intrinsic Diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.5 ±100 5 150.